| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device having high luminous efficiency characteristics, low threshold current characteristics, and low operating voltage characteristics, and to provide a method for manufacturing the nitride semiconductor laser device. SOLUTION: The nitride semiconductor laser device comprises a first cladding layer including a first-conductivity-type nitride semiconductor; an active layer that is provided on the first cladding layer and contains the nitride semiconductor; a second cladding layer that is provided on the active layer, has a stripe-like ridge waveguide ranging from a first end face to a second one and a side provided at both the sides of the ridge waveguide, and contains a second-conductivity-type nitride semiconductor; an upper electrode provided on the ridge waveguide; and a dielectric film deposited on the side section. The activation rate of the second-conductivity-type impurities at the side section of the second cladding layer is lower than that of the second-conductivity-type impurities at the ridge waveguide of the second cladding layer. COPYRIGHT: (C)2006,JPO&NCIPI
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