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发明名称
SEMICONDUCTOR MEMORY ATTAINING HIGH DATA READ SPEED AND HAVING HIGH NOISE MARGIN
摘要
申请公布号
EP0186906(A3)
申请公布日期
1987.09.02
申请号
EP19850116577
申请日期
1985.12.27
申请人
NEC CORPORATION
发明人
KOBAYASHI, YASUO
分类号
G11C11/417;G11C7/10;G11C7/22;G11C8/18;G11C11/401;G11C11/41;G11C11/419;(IPC1-7):G11C7/00
主分类号
G11C11/417
代理机构
代理人
主权项
地址
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