| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory and a semiconductor device in which falsification of data written thereinto is prevented. <P>SOLUTION: The memory includes a memory circuit, a writing circuit, and a reading circuit. The memory circuit has a memory cell array in which a plurality of memory cells where "0" and "1" of binary data can be written are arranged. The writing circuit includes a first writing circuit which writes one of "0" or "1" of binary data into one of the memory cells included in the memory circuit, and a second writing circuit which writes the other of "0" or "1" of binary data. <P>COPYRIGHT: (C)2009,JPO&INPIT |
