FORMATION OF NITROGEN CONTAINING DIELECTRIC LAYERS HAVING AN IMPROVED NITROGEN DISTRIBUTION

摘要

Provided is a method for manufacturing a gate dielectric. This method, without limitation, includes subjecting a silicon substrate (410) to a first plasma nitridation process to incorporate a nitrogen region (520) therein. This method further includes growing a dielectric material layer over the nitrogen region using a nitrogen containing oxidizer gas, and subjecting the dielectric material layer to a second plasma nitridation process (910), thereby forming a nitrided dielectric material layer (920) over the nitrogen region.