| 摘要 |
PROBLEM TO BE SOLVED: To provide a germanide thin film which is low in resistance and superior in thermal stability. SOLUTION: A Pt thin film 12 is formed on a germanium (Ge) substrate 11, and an Ni thin film 13 is formed above the Pt thin film 12. Then, the substrate is heated to form an (Ni<SB>1-x</SB>Pt<SB>x</SB>)Ge thin film made of three elements, e.g. Ni, Pt and Ge on the Ge substrate. The crystal orientation of crystal grains forming the germanide thin film has such an orientation that a [102] plane or a [001] plane is parallel to the [110] crystal plane of the germanium substrate. COPYRIGHT: (C)2009,JPO&INPIT
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