| 摘要 |
Disclosed is a technique of manufacturing a semiconductor device and a corresponding device. A metal line may be formed in a semiconductor device using a photoresist pattern with an oxide layer formed on the surface of a metal film, in accordance with embodiments. A heat-treatment process on a metal film may be performed to form an oxide-based thin film on a surface of the metal film. A photoresist pattern may be formed over a metal film. A metal film may be etched using a photoresist pattern as a mask. In embodiments, heat-treatment of a metal film may be performed in-situ using a baking unit provided in a track device that performs photo processing. Etching a metal film and etching an oxide-based thin film may be performed simultaneously.
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