发明名称 VIA USING ZN OR ZN ALLOYS AND ITS MAKING METHOD, 3D CHIP STACK PACKAGES USING THEROF
摘要 A via using Zn or Zn alloys and its making method is provided to reduce a processing time by filing a via hole with Zn and Zn alloy. A via hole is formed by performing deep reactive ion etching and a laser drilling to a silicon chip. A seed layer is deposited on the chip through a sputtering and PVD. A planting layer(130) is formed on the seed layer through electroplating and DC electrodeposition. A bubble generated in a processing of Zn or Zn alloy is suppressed by removing an oxide film. A chip for a chip stack process is formed by performing thinning through a CMP(Chemical Mechanical Polishing) of the front and rear of the chip.
申请公布号 KR20090035294(A) 申请公布日期 2009.04.09
申请号 KR20070100501 申请日期 2007.10.05
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 YU, JIN;JEE, YOUNG KUN
分类号 H01L21/28;H01L23/12 主分类号 H01L21/28
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