发明名称 |
VIA USING ZN OR ZN ALLOYS AND ITS MAKING METHOD, 3D CHIP STACK PACKAGES USING THEROF |
摘要 |
A via using Zn or Zn alloys and its making method is provided to reduce a processing time by filing a via hole with Zn and Zn alloy. A via hole is formed by performing deep reactive ion etching and a laser drilling to a silicon chip. A seed layer is deposited on the chip through a sputtering and PVD. A planting layer(130) is formed on the seed layer through electroplating and DC electrodeposition. A bubble generated in a processing of Zn or Zn alloy is suppressed by removing an oxide film. A chip for a chip stack process is formed by performing thinning through a CMP(Chemical Mechanical Polishing) of the front and rear of the chip. |
申请公布号 |
KR20090035294(A) |
申请公布日期 |
2009.04.09 |
申请号 |
KR20070100501 |
申请日期 |
2007.10.05 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
YU, JIN;JEE, YOUNG KUN |
分类号 |
H01L21/28;H01L23/12 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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