| 摘要 |
Pixel auxiliary capacitors (10) and pixel TFTs, which are thin-film elements, are formed on a substrate a lower electrode (Si) (3), insulating film, and an upper electrode (GE) (5) in this order. Each upper electrode (GE) (5) opposing to the corresponding lower electrode (Si) (3) is entirely enclosed within the outline of the lower electrode (Si) (3) in a plane view. Thus, it is possible to provide thin-film elements, which are not affected by edges of the lower electrode (Si) (3), a display device and a memory cell using the thin-film elements, and their fabrication methods.
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