发明名称 SUBSTRATE INSPECTION METHOD AND SUBSTRATE INSPECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To restrain an aberration increase caused by a spatial charge effect of a secondary electron beam in an overlapped area of a primary electron beam and the secondary electron beam. SOLUTION: This substrate inspection device 1 is provided with an electron gun 11 for generating the electron beam to irradiate a substrate S of a sample with the electron beam as the primary electron beam Bp, an electron detecting part 30 for detecting at least one of a secondary electron, a reflected electron and a backscattered electron emitted from the substrate S by the irradiation with the primary electron beam Bp to output a signal for expressing the state of the substrate S, and a secondary optical system 20 for guiding at least one of the secondary electron, the reflected electron and the backscattered electron, to be magnification-projected as the secondary electron beam Bs and to be image-focused on the detection face of an MCP detector 31 in the electron detecting part 30, and the substrate inspection device 1 is further provided with a deflector 68 for deflecting the primary electron beam Bp to reduce the overlapped area of an orbit of the primary electron beam Bp with an orbit of the secondary electron beam Bs. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009075120(A) 申请公布日期 2009.04.09
申请号 JP20080277011 申请日期 2008.10.28
申请人 TOSHIBA CORP 发明人 NAGAHAMA ICHIROTA;YAMAZAKI YUICHIRO;ONISHI ATSUSHI
分类号 G01N23/225;G01N23/203;H01J37/21;H01J37/244;H01J37/29;H01L21/66 主分类号 G01N23/225
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