METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS

摘要

Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.