| 摘要 |
A MOSFET device with an isolation structure for a monolithic integration is provided. A P-type MOSFET includes a first N-well disposed in a P-type substrate, a first P-type region disposed in the first N-well, a P+ drain region disposed in the first P-type region, a first source electrode formed with a P+ source region and an N+ contact region. The first N-well surrounds the P+ source region and the N+ contact region. An N-type MOSFET includes a second N-well disposed in a P-type substrate, a second P-type region disposed in the second N-well, an N+drain region disposed in the second N-well, a second source electrode formed with an N+ source region and a P+ contact region. The second P-type region surrounds the N+ source region and the P+ contact region. A plurality of separated P-type regions is disposed in the P-type substrate to provide isolation for transistors.
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