发明名称 |
REFLEKTIERENDER FOTOMASKENROHLING, REFLEKTIERENDE FOTOMASKE UND VERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN UNTER VERWENDUNG DIESER |
摘要 |
The invention is intended to enhance the precision of pattern inspection of a reflection type photomask used in EUV lithography by observing reflectivity contrast of DUV light. In a reflection type photomask blank having a multilayer reflection film (2) and a light absorption laminated layer (4) laminated on a substrate (1), the light absorption laminated layer (4) is composed by laminating a second light absorption layer (42) having DUV light absorbing capacity and containing at least one of nitrogen and oxygen, and tantalum and silicon, on a first light absorption layer (41) having EUV light absorbing capacity and containing tantalum and silicon. |
申请公布号 |
AT482466(T) |
申请公布日期 |
2010.10.15 |
申请号 |
AT20050814171T |
申请日期 |
2005.12.06 |
申请人 |
TOPPAN PRINTING CO., LTD. |
发明人 |
KANAYAMA, KOICHIRO;MATSUO, TADASHI;NISHIYAMA, YASUSHI |
分类号 |
H01L21/027;G03F1/00;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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