发明名称 Under bump metallurgy structure and wafer structure using the same and method of manufacturing wafer structure
摘要 An under bump metallurgy structure and wafer structure using the same and method of manufacturing wafer structure are provided. The under bump metallurgy structure includes an adhesion layer, a barrier layer and a wetting layer. The adhesion layer is disposed on a bonding pad of a wafer. The barrier layer is disposed on the adhesion layer. The wetting layer is disposed on the barrier layer. The adhesion layer, the barrier layer and the wetting layer are respectively made of nickel with boron, cobalt and gold.
申请公布号 US7800240(B2) 申请公布日期 2010.09.21
申请号 US20080149861 申请日期 2008.05.09
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 YU JUI-I
分类号 H01L23/52;H01L23/48;H01L29/40 主分类号 H01L23/52
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