| 发明名称 |
Methods for Producing a Tunnel Field-Effect Transistor |
| 摘要 |
A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods. |
| 申请公布号 |
US2011207282(A1) |
申请公布日期 |
2011.08.25 |
| 申请号 |
US201113081180 |
申请日期 |
2011.04.06 |
| 申请人 |
|
发明人 |
KAKOSCHKE RONALD;TEWS HELMUT |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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