| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light modulation device with an improved light modulation degree by a spin transfer switching element. <P>SOLUTION: A light modulation device 5 comprises a spin transfer switching element structure 1 with layers stacked in the order of a magnetization free layer 13, an intermediate layer 12 and a magnetization fixation layer 11 on a substrate 7. The magnetization free layer 13 is set as a bottom electrode 3, and a transparent electrode layer laid on the magnetization fixation layer 11 is set as a top electrode 4. The light modulation device 5 also comprises a dielectric layer 2 on which the magnetization free layer 13 is laid. Light entering the light modulation device 5 reflects on the substrate 7 after penetrating the spin transfer switching element structure 1 and the dielectric layer 2, and further reflects on an interface between the dielectric layer 2 and the magnetization free layer 13, and then goes out after accumulating optical rotation at a Kerr rotation angle of the magnetization free layer 13 through multiple reflection at the dielectric layer 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
