发明名称 |
Formation of dopant profile on semiconductor component in manufacture of solar cell, involves applying phosphorus dopant source on semiconductor component, forming dopant profile, removing source and forming other dopant profile |
摘要 |
<p>Formation of dopant profile on wafer-like semiconductor component involves applying phosphorus dopant source on surface of wafer-like semiconductor component, forming dopant profile (a) with dopant source, removing dopant source, and forming dopant profile (b) having depth more than dopant profile (a).</p> |
申请公布号 |
DE102011051606(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
DE20111051606 |
申请日期 |
2011.07.06 |
申请人 |
SCHOTT SOLAR AG |
发明人 |
BLENDIN, GABRIELE;HORZEL, JOERG;LACHOWICZ, AGATA;SCHUM, BERTHOLD |
分类号 |
H01L21/22;H01L21/306;H01L21/308 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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