发明名称 Formation of dopant profile on semiconductor component in manufacture of solar cell, involves applying phosphorus dopant source on semiconductor component, forming dopant profile, removing source and forming other dopant profile
摘要 <p>Formation of dopant profile on wafer-like semiconductor component involves applying phosphorus dopant source on surface of wafer-like semiconductor component, forming dopant profile (a) with dopant source, removing dopant source, and forming dopant profile (b) having depth more than dopant profile (a).</p>
申请公布号 DE102011051606(A1) 申请公布日期 2013.01.10
申请号 DE20111051606 申请日期 2011.07.06
申请人 SCHOTT SOLAR AG 发明人 BLENDIN, GABRIELE;HORZEL, JOERG;LACHOWICZ, AGATA;SCHUM, BERTHOLD
分类号 H01L21/22;H01L21/306;H01L21/308 主分类号 H01L21/22
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