NON-VOLATILE STORAGE ELEMENT, NON-VOLATILE STORAGE DEVICE, AND METHOD FOR WRITING INTO NON-VOLATILE STORAGE ELEMENT

摘要

A non-volatile storage element, wherein when the voltage values of electric pulses have the relationship of V2>V1>0V>V3>V4 and the resistance values of a variable resistance layer have the relationship of R3>R2>R4>R1, the variable resistance layer will have a resistance value of R2 if electric pulses having a voltage value of V2 or greater is applied between electrodes, the variable resistance layer will have a resistance value of R4 if electric pulses having a voltage value of V4 or less is applied between the electrodes, the variable resistance layer will have a resistance value of R3 if electric pulses having a voltage value of V3 is applied between the electrodes when the variable resistance layer has a resistance value of R2, and the variable resistance layer will have a resistance value of R1 if electric pulses having a voltage value of V1 is applied between the electrodes when the variable resistance layer has a resistance value of R4.