SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate (100); a gate stack, located on the substrate (100); a side wall (240), located on a lateral wall of the gate stack; a source/drain extension region (310), located in the substrate (100) at two sides of the gate stack, and formed through epitaxial growth; and a source/drain region (330), located in the substrate (100) at two sides of the source/drain extension region (310). Because a source/drain extension region with a high doping concentration and a shallow junction depth is formed, performance of the semiconductor structure is effectively improved.