发明名称 基板処理装置および基板処理方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technique which improves in-plane uniformity of a substrate temperature when a substrate is processed by using a mixture of a first process liquid and a second process liquid which generate reaction heat when mixed. <P>SOLUTION: A substrate processing apparatus includes: a first supply part (32, 200) supplying first and second process liquids toward a center region of a substrate; and a second supply part (120, 130) supplying the first and second process liquids toward an annular peripheral region enclosing the center region. A first process liquid supply pipe supplying the first process liquid and a second process liquid supply pipe supplying the second process liquid are respectively connected with the first supply part and the second supply part. The first supply part has a center part discharge port formed so as to discharge a mixture of the first and second process liquids toward the center region of the substrate, and the second supply part has multiple first discharge ports discharging the first process liquid toward positions which are located in the peripheral region of the substrate and are different from each other in the radial direction and multiple second discharge ports discharging the second process liquid toward positions which are located in the peripheral region of the substrate and are different from each other in the radial direction. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5661598(B2) 申请公布日期 2015.01.28
申请号 JP20110255401 申请日期 2011.11.22
申请人 发明人
分类号 H01L21/304;H01L21/027 主分类号 H01L21/304
代理机构 代理人
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