| 发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREFOR |
| 摘要 |
A photoelectric conversion device includes a positive electrode, a negative electrode, and a photoelectric conversion layer including a p-type organic semiconductor material and an n-type organic semiconductor material that configure a bulk heterojunction. The photoelectric conversion layer includes an amorphous polymer compound including a carbazole ring, a fluorene ring or a cyclopentadithiopene ring in a main chain as the p-type organic semiconductor material, and includes an amorphous fullerene derivative as the n-type organic semiconductor material. The photoelectric conversion layer has a diffraction peak corresponding to a plane spacing d=1.6 nm to 2.0 nm in an X-ray diffraction profile. |
| 申请公布号 |
US2015221885(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201514684903 |
申请日期 |
2015.04.13 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
MOMOSE Satoru;YOSHIKAWA Kota;DOI Shuuichi |
| 分类号 |
H01L51/42;H01L51/00 |
主分类号 |
H01L51/42 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A photoelectric conversion device, comprising:
a positive electrode; a negative electrode; and a photoelectric conversion layer including a p-type organic semiconductor material and an n-type organic semiconductor material that configure a bulk heterojunction, including an amorphous polymer compound including a carbazole ring, a fluorene ring or a cyclopentadithiopene ring in a main chain as the p-type organic semiconductor material, and including an amorphous fullerene derivative as the n-type organic semiconductor material; wherein the photoelectric conversion layer has a diffraction peak corresponding to a plane spacing d=1.6 nm to 2.0 nm in an X-ray diffraction profile. |
| 地址 |
Kawasaki-shi JP |
