| 摘要 |
<p>The present invention is apparatus for, and method of, purification of silicon by electric induction heating and melting of silicon in a crucible or susceptor vessel, with subsequent directional partial cooling of the silicon melt to an initial amorphous-to-crystalline (solidification) temperature to produce a directionally solidified purified quantity of silicon and a separate quantity of high impurity silicon. The quantity of high impurity silicon is removed from the vessel and the purified quantity of silicon at solidification temperature is remelted in the vessel for removal from the vessel or further processing.</p> |
