发明名称 SILICON CARBIDE PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To solve the problem that, while conventional production of silicon carbide is based on forming high temperatures in raw quartzite and raw carbon by electrifying carbon rods directly and allowing the raw materials to undergo a reduction reaction at the high temperatures, high-purity raw materials are necessary for acquisition of high-purity silicon carbide but raw materials are purified with chemicals because high-purity raw carbon, including carbon rods serving as a heat generation source, necessary for production of high-purity silicon carbide required by the market is so far unavailable, which is not green, of course, and yet insufficient for achievement of such high purity.SOLUTION: Various gases used in quite different applications in other industries are examined whether to be usable in this application as high-purity carbon sources and have been proved to be available as high-purity carbon sources, and high-purity silicon carbide required by the market is produced successfully by using the carbon sources.
申请公布号 JP2015168612(A) 申请公布日期 2015.09.28
申请号 JP20140060769 申请日期 2014.03.06
申请人 HOSHINO MASAHIRO;CHO RAKUNEN 发明人 HOSHINO MASAHIRO;CHO RAKUNEN
分类号 C01B31/36 主分类号 C01B31/36
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