| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device and a method of manufacturing the same are disclosed. In one aspect, the method includes forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate. The method also includes patterning the second and first semiconductor layers to form an initial fin. The method also includes selectively etching the first semiconductor layer of the initial fin to form a lateral recess in the first semiconductor layer. The method also includes filling the lateral recess with a dielectric material to form a body spacer. The method also includes forming an isolation layer on the substrate, wherein the isolation layer partially exposes the body spacer and thus defines a fin above the isolation layer. The method also includes forming a gate stack intersecting the fins on the isolation layer. |
| 申请公布号 |
US2015270263(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514705835 |
申请日期 |
2015.05.06 |
| 申请人 |
Institute of Microlectronics, Chinese Academy of Sciences |
发明人 |
Zhu Huilong |
| 分类号 |
H01L27/088;H01L29/66;H01L29/161;H01L29/16;H01L21/8234;H01L21/02;H01L21/306;H01L21/762;H01L21/3105;H01L29/06;H01L29/51 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a FinFET, comprising:
forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate; patterning the second and first semiconductor layers to form an initial fin; selectively etching the first semiconductor layer of the initial fin to form a lateral recess in the first semiconductor layer; filling the lateral recess with a dielectric material to form a body spacer; forming an isolation layer on the substrate, wherein the isolation layer partially exposes the body spacer to define a fin above the isolation layer; and forming a gate stack intersecting the fins on the isolation layer. |
| 地址 |
Beijing CN |
