| 摘要 |
<p>Provided is a gas barrier laminate that can be produced inexpensively as compared with the case of using an inorganic film without requiring a complex production process, and exhibits an excellent gas barrier capability and excellent flexibility, and also provided are a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. A gas barrier laminate including a base and a gas barrier layer, the gas barrier layer being provided on the base, the gas barrier layer being obtained by implanting ions into an organosilicon compound thin film formed by a CVD method that utilizes an organosilicon compound as a deposition raw material, a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member are provided.</p> |
