Resist composition and method for forming resist pattern

摘要

A resist composition including a high-molecular weight compound having a constituent unit represented by general formula (a0-1), a constituent unit (a1) containing a group containing a monocyclic group or a chain group among acid decomposable groups whose polarity increases by action of acid, a constituent unit (a1′) containing a group containing a polycyclic group among acid decomposable groups whose polarity increases by the action of an acid, and a constituent unit (a2) containing a lactone-containing monocyclic group, with a proportion of the constituent unit (a1) being equal to a proportion of the constituent unit (a1′) or more; and a method for forming a resist pattern using the resist composition.;

主权项

1. A resist composition which generates an acid upon exposure and having a solubility in a developing solution that changes by the action of the acid, the resist composition comprising a high-molecular weight compound (A1) having:
a constituent unit (a0) represented by the following general formula (a0-1); a constituent unit (a1) having an acid decomposable group that exhibits increased polarity by the action of the acid and has a monocyclic group or a chain group; a constituent unit (a1′) having an acid decomposable group that exhibits increased polarity by the action of the acid and has a polycyclic group; and a constituent unit (a2) having a lactone-containing monocyclic group, wherein a proportion of the constituent unit (a1) to a total sum of all of the constituent units constituting the high-molecular weight compound (A1) is greater than or equal to a proportion of the constituent unit (a1′):wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; R1 represents a lactone-containing polycyclic group; each of R2 and R3 independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; L1 represents an ester bond; and n1 is an integer of 1 to 3.