NANOWIRE LED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for ablating a first area of a light emitting diode (LED) device which includes an array of nanowires on a support with a laser is provided. The laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device. In embodiments, the nanowires are aligned at least 20 degrees from the plane of the support. A light emitting diode (LED) structure includes a first electrode for contacting a first conductivity type nanowire core, and a second electrode for contacting a second conductivity type shell enclosing the nanowire core, where the first electrode and/or at least a portion of the second electrode are flat.

主权项

1. A method comprising ablating a first area of an light emitting diode (LED) device with a laser, the LED device comprising an array of nanowires on a support, wherein the laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device; and
further comprising forming a second electrode for the LED structure wherein the second electrode is electrically connected to a second conductivity type semiconductor nanowire shell in the nanowires; and wherein the second electrode is formed by removing discrete LEDS by laser ablation in a second area to expose the underlying buffer layer; depositing an insulating material on the LED device by angled deposition such that the second area of the LED device is substantially completely covered by the insulating material and areas between the nanowires are free of the insulating material so that the shells of the nanowires are exposed; and depositing a conductive material over the LED device, so that the conductive material contacts the exposed nanowire shells to form a second electrode in contact with the nanowire shells.