Gate oxide quality for complex MOSFET devices

摘要

In various aspects, methods of forming a semiconductor device and semiconductor devices are provided. In some illustrative embodiments herein, a silicon/germanium layer is provided on a semiconductor substrate. On the silicon/germanium layer, at least one insulating material layer is formed. After having performed a thermal annealing process, the at least one insulating material layer is removed in subsequent process sequences such that the silicon/germanium layer is at least partially exposed. In further processing sequences which are to be subsequently applied, a gate electrode is formed on the exposed silicon/germanium layer.

主权项

1. A method of forming a semiconductor device, comprising:
forming a silicon germanium layer on a surface of a semiconductor substrate, the silicon germanium layer having an upper surface; forming at least one insulating material layer on an entire upper surface of said silicon germanium layer; thereafter performing an annealing process; removing said at least one insulating material layer for exposing the entire upper surface of said silicon germanium layer; and forming a gate dielectric material layer on said exposed the entire upper surface of said silicon germanium layer.