Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition

摘要

A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap.

主权项

1. A method for manufacturing a nanogap, the method comprising:
disposing an oxide on a wafer; disposing a nanowire on the oxide; and applying a helium ion beam to cut the nanowire into a first nanowire part and a second nanowire part to form the nanogap in a nanodevice; wherein applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap.