| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low cost dry etching method which allows for efficient manufacturing of a silicon substrate having a texture structure arranged to exhibit the light scattering confinement effect effectively and to ensure deposition with good coverage even when a predetermined thin film is formed in the post-process. <P>SOLUTION: A dry etching method includes: a first step for etching the surface of a silicon substrate W by introducing first etching gas containing fluorine-containing gas, halogen-containing gas and oxygen gas into a deposition chamber 12 where the silicon substrate is placed under reduced pressure, and then turning the power for discharge on; and a second step for further etching the surface of the silicon substrate by introducing second etching gas containing any one of fluorine-containing gas or halogen-containing gas as a main component and to which oxygen gas is added into the deposition chamber where the silicon substrate subjected to etching in the first step is placed under reduced pressure, and then turning the power for discharge on. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
