发明名称 |
Oxide sputtering target and protective film for optical recording medium |
摘要 |
The present invention relates to an oxide sputtering target. By using the oxide sputtering target for formation of a protective film for an optical recording medium, a film, which has high storage stability and breakage resistance due to flexibility, can be deposited. Also, it can be utilized for direct-current sputtering and forms a less amount of particles during sputtering. The oxide sputtering target is made of an oxide sintered body including: with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total content amount; 7 at % or more of Sn; and the balance Zn and inevitable impurities, wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less. |
申请公布号 |
US9123360(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201314375319 |
申请日期 |
2013.02.06 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Saito Atsushi;Mori Rie |
分类号 |
B32B3/02;G11B7/254;C04B35/453;G11B7/257;C04B35/645;G11B7/26;C23C14/08;C23C14/34;H01J37/34 |
主分类号 |
B32B3/02 |
代理机构 |
Locke Lord LLP |
代理人 |
Locke Lord LLP |
主权项 |
1. A oxide sputtering target made of an oxide sintered body comprising:
with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total content amount; 7 at % or more of Sn; and the balance Zn and inevitable impurities, wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less, wherein the sputtering target comprises ZnO phase and Zn2SnO4 phase, and wherein a ratio of a peak near 27° corresponding to SnO2 to a peak near 34° corresponding to Zn2SnO4 is 1/100 or less. |
地址 |
Tokyo JP |