METHOD OF MANUFACTURING THIN-FILM SOLAR CELL

摘要

A method of manufacturing a thin-film solar cell includes a first electrode forming step of forming a first electrode on a substrate; a first partition groove forming step of forming a first partition groove for dividing the first electrode and exposing a surface of the substrate in the first partition groove; a semiconductor layer forming step of forming a semiconductor layer on the first electrode and in the first partition groove; a second partition groove forming step of forming a second partition groove for dividing the semiconductor layer and exposing a surface of the first electrode in the second partition groove; a second electrode forming step of forming a second electrode on the semiconductor layer and in the second partition groove; and a third partition groove forming step of forming a third partition groove for dividing the second electrode and the semiconductor layer and exposing the surface of the first electrode in the third partition groove. At least one of the first partition groove forming step, the second partition groove forming step, and the third partition groove forming step includes an opening forming step of forming an opening in a partition groove forming layer where a partition groove is to be formed, by removing beforehand a part of the partition groove forming layer corresponding to a starting point from which the partition groove is formed, and thereby exposing a surface of a lower layer below the partition groove forming layer in the opening, and a partition groove forming step of bringing a needle into contact with the surface of the lower layer exposed in the opening and forming the partition groove by moving the needle in a predetermined direction.

主权项

1. A method of manufacturing a thin-film solar cell, the method comprising:
a first electrode forming step of forming a first electrode on a substrate; a first partition groove forming step of forming a first partition groove for dividing the first electrode and exposing a surface of the substrate in the first partition groove; a semiconductor layer forming step of forming a semiconductor layer on the first electrode and in the first partition groove; a second partition groove forming step of forming a second partition groove for dividing the semiconductor layer and exposing a surface of the first electrode in the second partition groove; a second electrode forming step of forming a second electrode on the semiconductor layer and in the second partition groove; and a third partition groove forming step of forming a third partition groove for dividing the second electrode and the semiconductor layer and exposing the surface of the first electrode in the third partition groove, wherein at least one of the first partition groove forming step, the second partition groove forming step, and the third partition groove forming step includes
an opening forming step of forming an opening in a partition groove forming layer where a partition groove is to be formed, by removing beforehand a part of the partition groove forming layer corresponding to a starting point from which the partition groove is formed, and thereby exposing a surface of a lower layer below the partition groove forming layer in the opening, anda partition groove forming step of bringing a needle into contact with the surface of the lower layer exposed in the opening and forming the partition groove by moving the needle in a predetermined direction.