Reacted Conductive Gate Electrodes and Methods of Making the Same

摘要

A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

主权项

1. A structure comprising:
a transistor comprising:
a gate stack comprising a gate electrode over a dielectric layer, the gate electrode comprising a first portion proximate the dielectric layer and a second portion distal from the dielectric layer, the first portion comprising a first material, the second portion comprising the first material, a second material, and a metal reacted with the first material and the second material, the first portion being unreacted with the metal; anda first source/drain region and a second source/drain region in a substrate, the substrate having a strained channel region defined by the gate stack, the strained channel region being disposed between the first source/drain region and the second source/drain region.