| 摘要 |
PROBLEM TO BE SOLVED: To provide a quality evaluation method of a silicon single crystal capable of evaluating the quality of the silicon single crystal with high accuracy, by detecting an oxidation-induced stacking fault (OSF) potentially existing in the silicon signal crystal while actualizing.SOLUTION: As a heat treatment method for generating an oxidation-induced stacking fault on the surface of a silicon single crystal in order to evaluate the quality of a silicon single crystal, the silicon single crystal is subjected to a first stage heat treatment at 350-550°C for 30-200 minutes, a second stage heat treatment at 550-750°C for 30-300 minutes, a third stage heat treatment at 750-900°C for 30-300 minutes, a fourth-stage heat treatment at 900-1,000°C for 30-1,440 minutes, and a fifth-stage heat treatment at 1,100-1,200°C for 30-200 minutes, in this order. |
