| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a substrate pattern that is finer and excellent in rectangularity.SOLUTION: The present invention relates to a pattern forming method including the steps of: using a substrate including a metal-containing film layered thereon and forming a self-assembling film on the metal-containing film; removing at least a part of phases of the self-assembling film; and sequentially etching the metal-containing film and the substrate using the self-assembling film after the step of removing, as a mask. The metal-containing film is preferably formed using a composition for forming a metal-containing film containing: at least one compound selected from the group consisting of a metal compound having a hydrolyzable group, a hydrolysis product of a metal compound having a hydrolyzable group, and a hydrolytic condensation product of a metal compound having a hydrolyzable group; and a first organic solvent. |
