Method for fabricating a phase-change memory cell

摘要

A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.

主权项

1. A method of fabricating a phase-change memory cell, the method comprising:
forming a dielectric layer on a metal layer above a substrate; forming a phase-change material layer on the dielectric layer; and forming, within the dielectric layer, a contact region between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer, the forming of the contact region including
determining a set-state target current for the phase-change material layer; andapplying, through the metal layer, a current pulse greater than the set-state target current; and subsequent to applying the current pulse greater than the set-state target current, making a determination of an actual amount of current driven by the phase-change memory cell in a crystalline state; and, based on a determination that the actual amount of current is less than the set-state target current, applying a second current pulse greater than the set-state target current, an amplitude of the second current pulse being greater than an amplitude of the current pulse; and subsequent to applying the second current pulse, making another determination of the actual current driven by the phase-change memory cell in the crystalline state.