| 发明名称 |
Solar cell comprising a p-doped silicon wafer and an aluminum electrode |
| 摘要 |
A solar cell comprising a p-doped silicon wafer, wherein the p-doped silicon wafer comprises a light-receiving side and a back side; and an aluminum electrode formed on the back side of the silicon wafer; wherein the aluminum electrode comprises an aluminum base layer formed adjacently on the back side of the silicon wafer and an aluminum cover layer formed on the aluminum base layer, and wherein the aluminum cover layer comprises aluminum and boron oxide (B2O3). |
| 申请公布号 |
US9112069(B2) |
申请公布日期 |
2015.08.18 |
| 申请号 |
US201313854349 |
申请日期 |
2013.04.01 |
| 申请人 |
E I DU PONT DE NEMOURS AND COMPANY |
发明人 |
Kondo Takeshi;Inaba Akira |
| 分类号 |
H01L31/0224;H01L31/18 |
主分类号 |
H01L31/0224 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solar cell comprising:
a p-doped silicon wafer, wherein the p-doped silicon wafer comprises a light-receiving side and a back side; and an aluminum electrode formed on the back side of the silicon wafer; wherein the aluminum electrode comprises an aluminum base layer formed adjacently on the back side of the silicon wafer and an aluminum cover layer formed on the aluminum base layer, and wherein the aluminum cover layer comprises aluminum and boron oxide (B2O3). |
| 地址 |
Wilmington DE US |
