发明名称 |
SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE |
摘要 |
A power supply topology is used in which a transistor is provided on the side of an output node of a rectifying circuit. An inductor is provided on the side of a reference node, a resistor is inserted between the transistor and the inductor, and one end of the resistor is coupled to a ground power supply voltage of a PFC circuit. The PFC circuit includes a square circuit which squares a result of multiplication of an input voltage detection signal and feedback information (output voltage of an error amplifier circuit). The PFC circuit drives on the transistor when a detection voltage developed at the resistor reaches zero, and drives off the transistor when the detection signal reaches an output signal of the square circuit. |
申请公布号 |
US2015230304(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201514695517 |
申请日期 |
2015.04.24 |
申请人 |
Renesas Electronics Corporation |
发明人 |
MAKINO Ryosei;YOKOTA Kenichi;TAZAWA Tomohiro |
分类号 |
H05B33/08 |
主分类号 |
H05B33/08 |
代理机构 |
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代理人 |
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主权项 |
1. An LED illuminating device comprising:
a first output node and a second output node coupled with a light emitting diode; a rectifying circuit which rectifies ac power and supplies power to a rectified output node; an N-channel type MOSFET having a gate terminal, a drain terminal and a source terminal, the drain terminal being coupled with the rectified output node; a current detection resistor coupled with the source terminal and a ground node, the ground node being coupled with a ground voltage; an inductor coupled with the ground node and the first output node; a diode whose anode and cathode are coupled with the second output node and the source terminal of the N-channel type MOSFET, respectively; an output capacitor coupled with the first output node and the second output node; and a control circuit coupled with the gate terminal and the source terminal of the N-channel type MOSFET,
a detection voltage of the source terminal being inputted into the control circuit,the control circuit providing a PWM signal to the gate terminal to control the N-channel type MOSFET. |
地址 |
Kawasaki-shi JP |