Magnetron sputtering apparatus and method of manufacturing semiconductor device

摘要

A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.

主权项

1. A magnetron sputtering apparatus comprising:
a vacuum chamber; a target and a substrate holder, which are disposed to face one another in the vacuum chamber; a magnetron disposed on the target side which is opposite to where the substrate holder is disposed; and a rotating mechanism designed to rotate the magnetron about an axis perpendicular to a face of the target; wherein the magnetron comprises an outer frame magnet and an inner frame magnet provided in the outer frame magnet, the outer frame magnet comprises: a first straight frame segment; a second straight frame segment which has an end continuous with an end of the first straight frame segment, and which has the same length as the first straight frame segment; and a third arcuate frame segment which has ends respectively continuous with other ends of the first and second straight frame segments, the first straight frame being located at an angle of 45 to 120 degrees to the second straight frame, the inner frame magnet comprises: a first straight frame segment which is located parallel to the first straight frame segment of the outer frame magnet a second straight frame segment which is located parallel to the second straight frame segment of the outer frame magnet, and which has the same length as the first straight frame segment of the inner frame magnet a third arcuate frame segment having ends which are continuous with ends of the first and second straight frame segments of the inner frame magnet and a fourth straight frame segment having ends continuous with other ends of the first and second straight frame segments of the inner frame magnet, the first and second straight frame segments and third arcuate frame segment of the outer frame magnet and the first, second, and fourth straight frame segments and third arcuate frame segment of the inner frame magnet have the same width, the outer and inner frame magnets are adapted to be rotated along with each about a rotational center which is located at a position in which the first and second straight frame segments of the outer frame magnet are continuous with each other, or which is located between the position and the fourth straight frame segment, a first gap between the third arcuate frame segments of the outer and inner frame magnets is set to a minimum possible distance required for securing a horizontal magnetic field of not less than 500 gauss at the face of target disposed to face the substrate holder, and second gaps between the first straight frame segments and between the second straight frame segments of the outer and inner frame magnets are set to not less than the magnitude of the first gap.