| 发明名称 |
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER |
| 摘要 |
According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlxGa1-xN (0<x≦1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×1019/cm3 and not more than 4×1020/cm3. The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor. |
| 申请公布号 |
US2015221728(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201514688290 |
申请日期 |
2015.04.16 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
HIKOSAKA Toshiki;HARADA Yoshiyuki;YOSHIDA Hisashi;SUGIYAMA Naoharu;NUNOUE Shinya |
| 分类号 |
H01L29/20;H01L29/267;H01L29/205 |
主分类号 |
H01L29/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
Minato-ku JP |
