发明名称 SILICON OXYNITRIDE MATERIALS HAVING PARTICULAR SURFACE ENERGIES AND ARTICLES INCLUDING THE SAME, AND METHODS FOR MAKING AND USING THEM
摘要 The present disclosure relates to silicon oxynitride materials having a variety of surface energies. One aspect of the disclosure is a method for forming a ceramic/substrate interface comprising forming a layer of substantially perhydrogenated polysilazane on a surface of a substrate; exposing the layer of substantially perhydrogenated polysilazane to energy sufficient to form a silicon oxynitride layer having an exposed surface, the exposed surface of the silicon oxynitride layer having a surface energy of at least about 50 mN/m; disposing a ceramic material or a precursor thereof on the silicon oxynitride layer; and heat treating to form the ceramic/substrate interface. Another aspect of the disclosure is an article having a patterned silicon oxynitride surface comprising a first region; and a second region, the second region having a surface energy substantially lower than the surface energy of the first region.
申请公布号 US2015209826(A1) 申请公布日期 2015.07.30
申请号 US201514609262 申请日期 2015.01.29
申请人 University of Washington 发明人 Bordia Rajendra;Flinn Brian D.;Wang Kaishi
分类号 B05D3/06;B05D1/38;B05D1/18;B05D3/02 主分类号 B05D3/06
代理机构 代理人
主权项 1. A method for forming a ceramic/substrate interface comprising a ceramic material disposed on a substrate, the method comprising: forming a layer of substantially perhydrogenated polysilazane on a surface of a substrate; exposing the layer of substantially perhydrogenated polysilazane to energy sufficient to form a silicon oxynitride layer having an exposed surface, the exposed surface of the silicon oxynitride layer having a surface energy of at least about 50 mN/m; disposing a ceramic material or a precursor thereof on the exposed surface of the silicon oxynitride layer; and exposing the layer of the ceramic material or the precursor thereof to sufficient energy to form the ceramic/substrate interface.
地址 Seattle WA US