THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE

摘要

Provided are a thin film transistor (TFT) and manufacturing method thereof, and array substrate. The TFT comprises a gate electrode (12), a source electrode (15) and a drain electrode (16), and a buffer layer (11) directly disposed at one or two sides of at least one of the gate electrode (12), the source electrode (15) and the drain electrode (16); and the buffer layer (11) is conformal with at least one of the gate electrode (12), the source electrode (15) and the drain electrode (16) directly contacting the buffer layer (11). The present invention improves the joint sealing property between the TFT electrode and a film layer contacting same, while effectively preventing the atoms in the TFT electrode from diffusing into the film layer connected to the TFT electrode, thus improving the reliability of the TFT, and reducing production costs.