| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a metalized film and a manufacturing method of the same in which a grain boundary area of an evaporation film evaporated on a surface of a dielectric film is decreased and lattice defect thereof is repaired to form an internal electrode of a metalized film capacitor having low electric resistivity. <P>SOLUTION: A manufacturing method of a metalized film 4 consisting of a dielectric film 1 included in a metalized film capacitor 10 and an internal electrode layer 2 arranged on a surface of the dielectric film 1, comprises: a first step in which a metal (evaporation metal 2") is evaporated on the surface of the dielectric film 1 as a metal evaporation film 2', and processing distortion is applied in a crystal of the metal evaporation film 2' by cold processing to make an intermediate 3 consisting of the dielectric film 1 and the metal evaporation film 2' to which the processing distortion is applied; and a second step in which heating treatment is applied to the intermediate 3, and at least one part of the metal evaporation film 2' is recrystallized as the internal electrode layer 2 to make the metalized film 4 consisting of the dielectric film 1 and the internal electrode layer 2. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
