SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a vertical cell type semiconductor device and a manufacturing method thereof. An insulation film on a substrate, a channel hole penetrating the insulation film, and a channel film in the channel hole are formed. A channel impurity area is formed by injecting a p-type impurity ion in the channel film. After forming the channel impurity area, a contact pad is formed on the channel impurity area. A string selecting gate electrode and cell gate electrodes are formed in the insulation film. The concentration of p-type impurities in the channel impurity area is higher than that of the channel film. The channel impurity area is adjacent to the string selecting gate electrode. The string selecting gate electrode is formed on the cell gate electrodes.