| 发明名称 |
MEMORY SYSTEM |
| 摘要 |
According to one embodiment, a memory system includes a nonvolatile semiconductor memory device and a controller. The system includes the nonvolatile semiconductor memory device including a plurality of memory cells; and the controller configured to control one of read operation, write operation, and a use frequency of the read operation or the write operation on the nonvolatile semiconductor memory device, and configured to change controlling for a memory cell belonging to a first group of the memory cells and to change controlling for a memory cell belonging to a second group located on an upper side or a lower side of the memory cell belonging to the first group. |
| 申请公布号 |
US2015206590(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414463835 |
申请日期 |
2014.08.20 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SAKUMA Haruka;Fukuzumi Yoshiaki;Aochi Hideaki;Sukegawa Hiroshi;Hara Tokumasa;Yao Hiroshi;Fujita Shirou;Magaki Ikuo;Sakuma Kiwamu;Saitoh Masumi |
| 分类号 |
G11C16/14;G11C16/26 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory system comprising:
a nonvolatile semiconductor memory device including a plurality of memory cells; and a controller configured to control one of read operation, write operation, and a use frequency of the read operation or the write operation on the nonvolatile semiconductor memory device, and configured to change controlling for a memory cell belonging to a first group of the memory cells and to change controlling for a memory cell belonging to a second group located on an upper side or a lower side of the memory cell belonging to the first group. |
| 地址 |
Minato-ku JP |
