| 摘要 |
The present invention relates to a technique of producing spontaneous radiation sources on the basis on A III B V semiconductor compounds for the spectral range of 2.6 - 4.7 µm, and to a technology of producing photosensitive structures for the spectral range of 2.0 - 4.7 µm. In the first embodiment, the heterostructure comprises a substrate containing InAs, a barrier layer which contains InSbP and which is arranged on the substrate, and an active layer which contains InAsSbP and which is arranged on the barrier layer. Light-emitting diodes produced on the basis of the first embodiment of the heterostructure emit at a wavelength in the range of 2.6 - 3.1 µm. In the second embodiment, the heterostructure comprises a substrate containing InAs, an active area which contains InAsSb and which is arranged on the substrate, and a barrier layer which contains InSbP and which is arranged on the active area. The active area can comprise a InAsSb bulk active layer, InAs/InAsSb quantum wells or a GaInAs/InAsSb strained superlattice. Light-emitting diodes produced on the basis of the second embodiment of the heterostructure emit at a wavelength in the range of 3.1- 4.7pm, and photodiodes have broadband sensitivity in the range of 2.0 - 4.7 µm. In the method of producing a heterostructure, tert-butylarsine is used as a source of arsenic, and tert-butylphosphine is used as a source of phosphorus. |
