Tunnel field-effect transistor

摘要

In a first aspect, the present invention relates to a tunnel field-effect transistor device (10) comprising a semiconductor substrate (11) and a fin structure (20) disposed thereon. The fin structure comprises a channel region (21) and a source region (22) disposed on the channel region. The TFET further comprises a drain region (12) contacting the channel region, wherein the source region and the drain region are of opposite conductivity type. The TFET also comprises a pocket layer (31) covering a gate interface portion (30) of the source region and contacting at least part of the channel region. The TFET further comprises a gate dielectric layer (32) covering the pocket layer and a gate electrode (33) covering the gate dielectric layer. The gate interface portion of the source region comprises at least three mutually non-coplanar surface segments (41,42,43,44). The present invention also relates to a method for manufacturing such TFET device.