Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an enhanced high-aspect-ratio process (eHARP) oxide fill that is disposed in an STI trench between two adjacent fins to form a recessed eHARP oxide fill. The two adjacent fins extend from a bulk semiconductor substrate. A silicon layer is formed overlying the recessed eHARP oxide fill. The silicon layer is converted to a thermal oxide layer to further fill the STI trench with oxide material.

主权项

1. A method for fabricating an integrated circuit comprising:
etching an enhanced high-aspect-ratio process (eHARP) oxide fill disposed in an STI trench between two adjacent fins that extend from a bulk semiconductor substrate to form a recessed eHARP oxide fill; forming a silicon layer overlying the recessed eHARP oxide fill; and converting the silicon layer to a thermal oxide layer.