| 发明名称 | Semiconductor structure and method for manufacturing the same | ||
| 摘要 | A semiconductor structure and a method for manufacturing the same are provided. The method comprises following steps. Semiconductor units are arranged on a substrate. A material layer is formed on the semiconductor units. A first patterned mask layer is formed on the semiconductor units. The first patterned mask layer has a mask opening corresponding to a portion of the semiconductor units and exposing the material layer. A portion of the material layer exposed by the mask opening is removed to remain a portion of the material layer on a sidewall of each of the semiconductor units exposed by the mask opening to form spacer structures. | ||
| 申请公布号 | US9082657(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201213676672 | 申请日期 | 2012.11.14 |
| 申请人 | MACRONIX INTERNATIONAL CO., LTD. | 发明人 | Hu Chih-Wei;Yeh Teng-Hao;Shih Yen-Hao |
| 分类号 | H01L21/3205;H01L27/115 | 主分类号 | H01L21/3205 |
| 代理机构 | McClure, Qualey & Rodack, LLP | 代理人 | McClure, Qualey & Rodack, LLP |
| 主权项 | 1. A method for manufacturing a semiconductor structure, comprising: forming semiconductor units arranged on a substrate; forming a material layer on the semiconductor units; forming a first patterned mask layer on the semiconductor units, wherein the first patterned mask layer has a mask opening corresponding to a portion of the semiconductor units and exposing the material layer; and removing a portion of the material layer exposed by the mask opening so as to remain a portion of the material layer on a sidewall of each of the semiconductor units exposed by the mask opening to form spacer structures. | ||
| 地址 | Hsinchu TW | ||