| 发明名称 |
GATE STACK AND CONTACT STRUCTURE |
| 摘要 |
A process for fabrication of semiconductor devices, particularly FinFETs, having a low contact horizontal resistance and a resulting device are provided. Embodiments include: providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first length on the gate region; forming an epitaxy layer on the source and drain regions; forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length. |
| 申请公布号 |
US2015194517(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201414147181 |
申请日期 |
2014.01.03 |
| 申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
ZANG Hui |
| 分类号 |
H01L29/78;H01L21/02;H01L21/283;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first length on the gate region; forming an epitaxy layer on the source and drain regions; forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length. |
| 地址 |
GRAND CAYMAN KY |
