HIGH CURRENT CAPABLE ACCESS DEVICE FOR THREE-DIMENSIONAL SOLID-STATE MEMORY

摘要

The present invention generally relates to three-dimensional arrangement of memory cells and methods of addressing those cells. The memory cells can be arranged in a 3D orientation such that macro cells that are in the middle of the 3D arrangement can be addressed without the need for overhead wiring or by utilizing a minimal amount of overhead wiring. An individual macro cell within a memory cell can be addressed by applying three separate currents to the macro cell. A first current is applied to the memory cell directly. A second current is applied to the source electrode of the MESFET, and a third current is applied to the gate electrode of the MESFET to permit the current to travel through the channel of the MESFET to the drain electrode which is coupled to the memory element.

主权项

1. A three-dimensional memory array, comprising:
a plurality of first memory cells, each first memory cell coupled to a first three terminal device, wherein the first three terminal device is coupled to a first electrical connector, a second electrical connector and a third electrical connector; a plurality of second memory cells, each second memory cell coupled to a second three terminal device, wherein the second three terminal device is coupled to a first electrical connector, a second electrical connector and a third electrical connector; and a plurality of third memory cells, each third memory cell coupled to a third three terminal device, wherein the third three terminal device is coupled to a first electrical connector, a second electrical connector and a third electrical connector, and wherein first electrical connector of the first three terminal device is coupled to the first electrical connector of the second three terminal device and the third three terminal device.